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Chinese university designed 'world's first silicon-free 2D GAAFET transistor,' claims new bismuth-based tech is both the fastest and lowest-power transistor yet
From Tom's Hardware:A research team from Peking University has published its findings on a two-dimensional, low-power GAAFET transistor, the first of its kind in the world. Led by Professor Peng Hailin and Qiu Chenguang, the multi-disciplinary team published in Nature, with some team members calling the discovery nothing short of a monumental breakthrough.
The Peking team has fabricated what the paper describes as a "wafer-scale multi-layer-stacked single-crystalline 2D GAA configuration."
"It is the fastest, most efficient transistor ever," said Peng of his team's breakthrough. "If chip innovations based on existing materials are considered a 'short cut,' then our development of 2D material-based transistors is akin to 'changing lanes,'" continues Peng in a statement for Peking University's website (accessed via South China Morning Post).

Chinese university designed 'world's first silicon-free 2D GAAFET transistor,' claims new bismuth-based tech is both the fastest and lowest-power transistor yet
Peking University is making big strides into the post-silicon and Angstrom eras.
Another source: https://www.pcgamer.com/hardware/pr...to-intel-and-tsmc-with-40-percent-more-speed/
Cool video about it:
So in short:
- It's a new tech which could be used for transistor going under 1nm.
- It's faster and more efficient
- Could exceed speeds of 500Ghz
- China has over 70% of the world's resource